Radiation-induced alloy rearrangement in InxGa1− xN

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2017-03-27
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Language
en
Pages
1-4
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Applied Physics Letters, Volume 110, issue 13
Abstract
The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.
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Prozheeva , V , Makkonen , I , Cuscó , R , Artús , L , Dadgar , A , Plazaola , F & Tuomisto , F 2017 , ' Radiation-induced alloy rearrangement in In x Ga 1− x N ' , Applied Physics Letters , vol. 110 , no. 13 , 132104 , pp. 1-4 . https://doi.org/10.1063/1.4979410