Radiation-induced alloy rearrangement in InxGa1− xN
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Applied Physics Letters, Volume 110, issue 13, pp. 1-4
Abstract
The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.Description
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Prozheeva, V, Makkonen, I, Cuscó, R, Artús, L, Dadgar, A, Plazaola, F & Tuomisto, F 2017, 'Radiation-induced alloy rearrangement in In x Ga 1− x N', Applied Physics Letters, vol. 110, no. 13, 132104, pp. 1-4. https://doi.org/10.1063/1.4979410