Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

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A2 Katsausartikkeli tieteellisessä aikakauslehdessä
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Date
2024-08-23
Department
Department of Chemistry and Materials Science
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Mcode
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Language
en
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Advanced Materials Interfaces
Abstract
High-quality rare earth element (R) based thin films are in demand for applications ranging from (opto)electronics and energy conversion/storage to medical diagnostics, imaging and security technologies. Atomic layer deposition (ALD) offers large-area homogeneous and conformal ultrathin films and is uniquely suited to address the requirements set by the potential applications of R-based thin films. The history starts from the 1990s, when the first electroluminescent R-doped thin films were grown with ALD. The interest soon expanded to rare earth element oxide layers as high-k gate dielectrics in semiconductor devices, and later to complex ternary and quaternary perovskite oxides with novel functional properties. The most recent advancements related to the combined atomic/molecular layer deposition (ALD/MLD) have rapidly expanded the family of R-organic hybrid materials with intriguing luminescence and up-conversion properties. This review provides up-to-date insights to the current state of ALD and ALD/MLD research of R-based thin films and highlights their application potential.
Description
| openaire: EC/HE/101097815/EU//UniEn-MLD
Keywords
atomic layer deposition, lanthanides, molecular layer deposition, rare earth elements, thin films
Other note
DOI
10.1002/admi.202400274
Citation
Ghazy, A, Zanders, D, Devi, A & Karppinen, M 2024, ' Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements ', Advanced Materials Interfaces . https://doi.org/10.1002/admi.202400274
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https://urn.fi/URN:NBN:fi:aalto-202409116336
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[article-cris] Kemian tekniikan korkeakoulu / CHEM