Tracking defect-induced ferromagnetism in GaN:Gd

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRoever, M.en_US
dc.contributor.authorMalindretos, J.en_US
dc.contributor.authorBedoya-Pinto, A.en_US
dc.contributor.authorRizzi, A.en_US
dc.contributor.authorRauch, C.en_US
dc.contributor.authorTuomisto, F.en_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorAntimatter and Nuclear Engineeringen
dc.date.accessioned2017-06-20T11:13:52Z
dc.date.available2017-06-20T11:13:52Z
dc.date.issued2011-08en_US
dc.description.abstractWe report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 1019 cm−3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.extent1-4
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationRoever, M, Malindretos, J, Bedoya-Pinto, A, Rizzi, A, Rauch, C & Tuomisto, F 2011, ' Tracking defect-induced ferromagnetism in GaN:Gd ', Physical Review B, vol. 84, no. 8, 081201, pp. 1-4 . https://doi.org/10.1103/PhysRevB.84.081201en
dc.identifier.doi10.1103/PhysRevB.84.081201en_US
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.otherPURE UUID: 13f9054e-9cfb-468a-97aa-4c76784defc0en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/13f9054e-9cfb-468a-97aa-4c76784defc0en_US
dc.identifier.otherPURE LINK: http://prb.aps.org/abstract/PRB/v84/i8/e081201en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/13457333/PhysRevB.84.081201.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/26933
dc.identifier.urnURN:NBN:fi:aalto-201706205657
dc.language.isoenen
dc.relation.ispartofseriesPHYSICAL REVIEW Ben
dc.relation.ispartofseriesVolume 84, issue 8en
dc.rightsopenAccessen
dc.subject.keyworddefectsen_US
dc.subject.keywordferromagnetismen_US
dc.subject.keywordGaNen_US
dc.titleTracking defect-induced ferromagnetism in GaN:Gden
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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