Tracking defect-induced ferromagnetism in GaN:Gd

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2011-08
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
1-4
Series
PHYSICAL REVIEW B, Volume 84, issue 8
Abstract
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 1019 cm−3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.
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Keywords
defects, ferromagnetism, GaN
Other note
Citation
Roever, M, Malindretos, J, Bedoya-Pinto, A, Rizzi, A, Rauch, C & Tuomisto, F 2011, ' Tracking defect-induced ferromagnetism in GaN:Gd ', Physical Review B, vol. 84, no. 8, 081201, pp. 1-4 . https://doi.org/10.1103/PhysRevB.84.081201