Ozone-based batch atomic layer deposited Al2O3 for effective surface passivation

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openAccess

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Journal Title

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Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2013

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Mcode

Degree programme

Language

en

Pages

890-894

Series

ENERGY PROCEDIA, Volume 38

Abstract

In this paper we compare water and ozone as oxidants in the Al2O3 ALD reaction in terms of surface passivation quality. The experiments show that O3 produces a high negative charge density up to 7-1012 cm−2 even in as-deposited film, which is different from water based Al2O3 that requires a separate annealing step to activate the negative charge. In general, the ozone process produces lower interface defect density (Dit) and higher negative charge density, which contributes to the higher lifetime value than corresponding water process. Most importantly, ozone-based Al2O3 shows much better firing stability than water-based Al2O3. Ozone concentration is also shown to play a role in the surface passivation quality. Finally, we found out that inserting a water pulse after the ozone pulse can lower the Dit further resulting in even higher lifetime.

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Keywords

Atomic layer deposition, ozone, aluminum oxide, Si surface passivation

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Citation

von Gastrow, G, Li, S, Repo, P, Bao, Y, Putkonen, M & Savin, H 2013, ' Ozone-based batch atomic layer deposited Al2O3 for effective surface passivation ', Energy Procedia, vol. 38, pp. 890-894 . https://doi.org/10.1016/j.egypro.2013.07.361