Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRummukainen, Mikko
dc.contributor.authorMakkonen, Ilja
dc.contributor.authorRanki, Ville
dc.contributor.authorPuska, Martti
dc.contributor.authorSaarinen, Kimmo
dc.contributor.authorGossmann, H.-J.L.
dc.contributor.departmentDepartment of Applied Physics
dc.date.accessioned2018-05-22T14:50:08Z
dc.date.available2018-05-22T14:50:08Z
dc.date.issued2005-04-15
dc.description.abstractPositron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1–2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400–500 K convert the defects to larger complexes where the open volume is neighbored by 2–3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.extent1-4
dc.format.mimetypeapplication/pdf
dc.identifier.citationRummukainen , M , Makkonen , I , Ranki , V , Puska , M , Saarinen , K & Gossmann , H-JL 2005 , ' Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy ' , Physical Review Letters , vol. 94 , no. 16 , 165501 , pp. 1-4 . https://doi.org/10.1103/PhysRevLett.94.165501en
dc.identifier.doi10.1103/PhysRevLett.94.165501
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.otherPURE UUID: dbe4c742-ee9a-4caf-ab20-4cc23d1af9f1
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/dbe4c742-ee9a-4caf-ab20-4cc23d1af9f1
dc.identifier.otherPURE LINK: http://link.aps.org/abstract/PRL/v94/e165501
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/4399331/PhysRevLett.94.165501.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/31206
dc.identifier.urnURN:NBN:fi:aalto-201805222646
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Lettersen
dc.relation.ispartofseriesVolume 94, issue 16en
dc.rightsopenAccessen
dc.subject.keywordpositron
dc.titleVacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxyen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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