Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2005-04-15
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Language
en
Pages
4
1-4
1-4
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Physical Review Letters, Volume 94, issue 16
Abstract
Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1–2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400–500 K convert the defects to larger complexes where the open volume is neighbored by 2–3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.Description
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positron
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Citation
Rummukainen , M , Makkonen , I , Ranki , V , Puska , M , Saarinen , K & Gossmann , H-JL 2005 , ' Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy ' , Physical Review Letters , vol. 94 , no. 16 , 165501 , pp. 1-4 . https://doi.org/10.1103/PhysRevLett.94.165501
