Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Physical Review Letters, Volume 94, issue 16, pp. 1-4
Abstract
Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1–2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400–500 K convert the defects to larger complexes where the open volume is neighbored by 2–3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.Description
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Rummukainen, M, Makkonen, I, Ranki, V, Puska, M, Saarinen, K & Gossmann, H-JL 2005, 'Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy', Physical Review Letters, vol. 94, no. 16, 165501, pp. 1-4. https://doi.org/10.1103/PhysRevLett.94.165501