Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorBoulfrad, Yacine
dc.contributor.authorHaarahiltunen, Antti
dc.contributor.authorSavin, Hele
dc.contributor.authorØvrelid, Eivind J.
dc.contributor.authorArnberg, Lars
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-06-02T09:00:43Z
dc.date.available2015-06-02T09:00:43Z
dc.date.issued2013
dc.description.abstractThe deteriorated area of the multicrystalline silicon (mc-Si) ingots grown by directional solidification, commonly known as the Red Zone, is usually removed before wafering. This area, characterized by poor minority carrier lifetime, is located on the sides, at the top, and the bottom of the mc-Si ingots. In this study, the effect of internal gettering by oxygen precipitates and structural defects has been investigated on the bottom zone of a mc-Si ingot. Nucleation and growth of oxygen precipitates as well as low temperature annealing were studied. Photoluminescence imaging, lifetime mapping, and interstitial iron measurements performed by μ-PCD reveal a considerable reduction of the bottom Red Zone. An improvement of lifetime from below 1 µs to about 20 µs and a reduction of interstitial iron concentration from 1.32 × 1013 at/cm3 to 8.4 × 1010 at/cm3 are demonstrated in this paper.en
dc.description.versionPeer revieweden
dc.format.extent10
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBoulfrad, Yacine & Haarahiltunen, Antti & Savin, Hele & Øvrelid, Eivind J. & Arnberg, Lars. 2013. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering. Progress in Photovoltaics: Research and Applications. Volume 23, Issue 1. DOI: 10.1002/pip.2391.en
dc.identifier.doi10.1002/pip.2391
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/16400
dc.identifier.urnURN:NBN:fi:aalto-201505293047
dc.language.isoenen
dc.publisherWiley-Blackwellen
dc.relation.ispartofseriesProgress in Photovoltaics: Research and Applicationsen
dc.relation.ispartofseriesVolume 23, Issue 1
dc.rights© 2013 Wiley-Blackwell. This is the post print version of the following article: Boulfrad, Yacine & Haarahiltunen, Antti & Savin, Hele & Øvrelid, Eivind J. & Arnberg, Lars. 2013. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering. Progress in Photovoltaics: Research and Applications. Volume 23, Issue 1. DOI: 10.1002/pip.2391, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pip.2391/fullen
dc.rights.holderWiley-Blackwell
dc.subject.keywordmulticrystalline siliconen
dc.subject.keywordinternal getteringen
dc.subject.keywordironen
dc.subject.keywordRed Zoneen
dc.subject.otherPhysicsen
dc.titleEnhanced performance in the deteriorated area of multicrystalline silicon wafers by internal getteringen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionPost printen
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