aalto1 untyped-item.component.html
Atomic Layer Deposition of Highly Conducting NiS2 Thin Films from Elemental Sulfur
Loading...
Access rights
openAccess
CC BY
CC BY
Creative Commons license
Except where otherwised noted, this item's license is described as openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Major/Subject
Mcode
Degree programme
Language
en
Pages
10
Series
Advanced Materials Interfaces, Volume 13, issue 3
Abstract
A novel atomic layer deposition (ALD) process for highly conducting nickel disulfide thin films is introduced. This simple, sustainable and safe deposition process is based on two solid precursors, nickel acetylacetonate (Ni(acac)2) and elemental sulfur. The process yields single-phase NiS2 thin films in the deposition temperature range from 220°C to 270°C, with an appreciably high growth rate of ca. 3.42 Å per cycle. The as-deposited films are highly crystalline and chemically homogeneous. Room-temperature electrical conductivity values up to 2.8 × 103 S/m and optical bandgap values in the range of 0.8–0.9 eV are measured for the films. The distinctly high surface area of the films, caused by flake-like nanostructures, together with the excellent electrical properties makes the present ALD-grown NiS2 thin films attractive for various electrochemical applications, such as catalysts for hydrogen evolution reaction.
Description
| openaire: EC/HE/101097815/EU//UniEn-MLD
Keywords
Other note
Citation
Linjala, J, Singh, Y, Tewari, G C, Meinander, K, Tripathi, T S & Karppinen, M 2026, 'Atomic Layer Deposition of Highly Conducting NiS 2 Thin Films from Elemental Sulfur', Advanced Materials Interfaces, vol. 13, no. 3, e00987. https://doi.org/10.1002/admi.202500987