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Environment-Assisted Tunneling as an Origin of the Dynes Density of States
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© 2010 American Physical Society (APS). http://www.aps.org/
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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026803/1-4
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Physical Review Letters, Volume 105, Issue 2
Abstract
We show that the effect of a high-temperature environment in current transport through a normal metal–insulator–superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.
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Pekola, Jukka & Maisi, V. F. & Kafanov, S. & Chekurov, N. & Kemppinen, A. & Pashkin, Yu. A. & Saira, O.-P. & Möttönen, M. & Tsai, J. S. 2010. Environment-Assisted Tunneling as an Origin of the Dynes Density of States. Physical Review Letters. Volume 105, Issue 2. 026803/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.105.026803.