Magnetoresistance effect in the fluctuating-valence BaSmFe[sub 2]O[sub 5+w] system
Loading...
Access rights
© 2000 AIP Publishing. This is the accepted version of the following article: Nakamura, J. & Lindén, J. & Karppinen, Maarit & Yamauchi, H. 2000. Magnetoresistance effect in the fluctuating-valence BaSmFe[sub 2]O[sub 5+w] system. Applied Physics Letters. Volume 77, Issue 11. 1683-1685. ISSN 0003-6951 (printed). DOI: 10.1063/1.1310170, which has been published in final form at http://scitation.aip.org/content/aip/journal/apl/77/11/10.1063/1.1310170.
Journal Title
Journal ISSN
Volume Title
School of Chemical Technology |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
2000
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
1683-1685
Series
Applied Physics Letters, Volume 77, Issue 11
Abstract
The occurrence of negative magnetoresistance(MR) in semiconductive BaSmFe2O5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey–type transition temperature. The transition signifies the charge separation of the Fe2.5+fluctuating mixed valence state into high-spin Fe2+ and Fe3+. The samples were ferrimagnetic with a Curie temperature of ∼710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4% at 7 T.Description
Keywords
ferrimagnetism, magnetoresistance, Curie point
Other note
Citation
Nakamura, J. & Lindén, J. & Karppinen, Maarit & Yamauchi, H. 2000. Magnetoresistance effect in the fluctuating-valence BaSmFe[sub 2]O[sub 5+w] system. Applied Physics Letters. Volume 77, Issue 11. 1683-1685. ISSN 0003-6951 (printed). DOI: 10.1063/1.1310170.
