Magnetoresistance effect in the fluctuating-valence BaSmFe[sub 2]O[sub 5+w] system
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© 2000 AIP Publishing. This is the accepted version of the following article: Nakamura, J. & Lindén, J. & Karppinen, Maarit & Yamauchi, H. 2000. Magnetoresistance effect in the fluctuating-valence BaSmFe[sub 2]O[sub 5+w] system. Applied Physics Letters. Volume 77, Issue 11. 1683-1685. ISSN 0003-6951 (printed). DOI: 10.1063/1.1310170, which has been published in final form at http://scitation.aip.org/content/aip/journal/apl/77/11/10.1063/1.1310170.
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School of Chemical Technology |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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1683-1685
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Applied Physics Letters, Volume 77, Issue 11
Abstract
The occurrence of negative magnetoresistance(MR) in semiconductive BaSmFe2O5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey–type transition temperature. The transition signifies the charge separation of the Fe2.5+fluctuating mixed valence state into high-spin Fe2+ and Fe3+. The samples were ferrimagnetic with a Curie temperature of ∼710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4% at 7 T.Description
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Nakamura, J. & Lindén, J. & Karppinen, Maarit & Yamauchi, H. 2000. Magnetoresistance effect in the fluctuating-valence BaSmFe[sub 2]O[sub 5+w] system. Applied Physics Letters. Volume 77, Issue 11. 1683-1685. ISSN 0003-6951 (printed). DOI: 10.1063/1.1310170.