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Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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6
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Physical Review B, Volume 88, issue 23, pp. 1-6
Abstract
We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ
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Virkkala, V, Havu, V, Tuomisto, F & Puska, M J 2013, 'Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys', Physical Review B, vol. 88, no. 23, 235201, pp. 1-6. https://doi.org/10.1103/PhysRevB.88.235201