Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013-12-05
Department
Department of Applied Physics
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Language
en
Pages
6
1-6
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PHYSICAL REVIEW B, Volume 88, issue 23
Abstract
We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ
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DOI
10.1103/PhysRevB.88.235201
Citation
Virkkala , V , Havu , V , Tuomisto , F & Puska , M J 2013 , ' Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys ' , Physical Review B , vol. 88 , no. 23 , 235201 , pp. 1-6 . https://doi.org/10.1103/PhysRevB.88.235201
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https://urn.fi/URN:NBN:fi:aalto-201706205670
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[article-cris] Perustieteiden korkeakoulu / SCI