Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Linez, F. | en_US |
dc.contributor.author | Makkonen, I. | en_US |
dc.contributor.author | Tuomisto, F. | en_US |
dc.contributor.department | Department of Applied Physics | en |
dc.contributor.groupauthor | Antimatter and Nuclear Engineering | en |
dc.date.accessioned | 2016-10-13T06:10:12Z | |
dc.date.issued | 2016-07-06 | en_US |
dc.description.abstract | We have determined positron annihilation characteristics (lifetime and Doppler broadening) in six basic vacancy-type defects of 6H-SiC and two nitrogen-vacancy complexes using ab initio calculations. The positron characteristics obtained allow us to point out which positron technique in the most adapted to identify a particular defect. They show that the coincidence Doppler broadening technique is the most relevant for observing the silicon vacancy-nitrogen complexes, VSiNC, and carbon vacancy-carbon antisite ones, VCCSi. For the other studied defects, the calculated positron characteristics are found to be too close for the defects to be easily distinguished using a single positron annihilation technique. Then it is required to use complementary techniques, positron annihilation based or other. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 1-11 | |
dc.format.mimetype | application/pdf | en_US |
dc.identifier.citation | Linez, F, Makkonen, I & Tuomisto, F 2016, ' Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally ', Physical Review B, vol. 94, no. 1, 014103, pp. 1-11 . https://doi.org/10.1103/PhysRevB.94.014103 | en |
dc.identifier.doi | 10.1103/PhysRevB.94.014103 | en_US |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.other | PURE UUID: 91439b21-25a9-4307-ab52-3f441775e5ec | en_US |
dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/91439b21-25a9-4307-ab52-3f441775e5ec | en_US |
dc.identifier.other | PURE LINK: http://www.scopus.com/inward/record.url?scp=84978759722&partnerID=8YFLogxK | en_US |
dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/6664172/PhysRevB.94.pdf | en_US |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/22921 | |
dc.identifier.urn | URN:NBN:fi:aalto-201610135021 | |
dc.language.iso | en | en |
dc.relation.ispartofseries | PHYSICAL REVIEW B | en |
dc.relation.ispartofseries | Volume 94, issue 1 | en |
dc.rights | openAccess | en |
dc.title | Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.version | publishedVersion |