Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Authors
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Physical Review B, Volume 94, issue 1, pp. 1-11
Abstract
We have determined positron annihilation characteristics (lifetime and Doppler broadening) in six basic vacancy-type defects of 6H-SiC and two nitrogen-vacancy complexes using ab initio calculations. The positron characteristics obtained allow us to point out which positron technique in the most adapted to identify a particular defect. They show that the coincidence Doppler broadening technique is the most relevant for observing the silicon vacancy-nitrogen complexes, VSiNC, and carbon vacancy-carbon antisite ones, VCCSi. For the other studied defects, the calculated positron characteristics are found to be too close for the defects to be easily distinguished using a single positron annihilation technique. Then it is required to use complementary techniques, positron annihilation based or other.Description
Keywords
Other note
Citation
Linez, F, Makkonen, I & Tuomisto, F 2016, 'Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally', Physical Review B, vol. 94, no. 1, 014103, pp. 1-11. https://doi.org/10.1103/PhysRevB.94.014103