Stability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditions

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHeikkinen, Ismoen_US
dc.contributor.authorKoutsourakis, Georgeen_US
dc.contributor.authorWood, Sebastianen_US
dc.contributor.authorVähänissi, Villeen_US
dc.contributor.authorCastro, Fernando A.en_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.departmentHele Savin Groupen_US
dc.contributor.departmentNational Physical Laboratory (NPL)en_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.date.accessioned2019-09-20T11:07:18Z
dc.date.available2019-09-20T11:07:18Z
dc.date.issued2019-08-27en_US
dc.description.abstractSurface passivation layers that are stable in the long term are becoming increasingly important in emerging architectures of crystalline silicon photovoltaics. In this work, we study the effect of elevated temperature and humidity on the surface passivation properties of 5 nm to 20 nm thick aluminum oxide (AlOx) layers grown using thermal Atomic Layer Deposition (ALD). ALD-coated p-type Float Zone (FZ) wafers were exposed to 40°C and 85°C in 85% relative humidity (RH), and the passivation properties of the AlOx films were monitored during the damp heat exposure at designated intervals by photoluminescence (PL) imaging. Additionally, minority charge-carrier lifetime, film charge, and interface defect density were measured before and after the exposure. The results indicated that even 5 nm AlOx layers were stable under the prolonged damp heat exposure, and that 20 nm thick passivation layers deposited using either water (H2O) or ozone (O3) as the oxidant in the ALD process had no major differences in passivation stability.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationHeikkinen , I , Koutsourakis , G , Wood , S , Vähänissi , V , Castro , F A & Savin , H 2019 , Stability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditions . in SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics . vol. 2147 , AIP Conference Proceedings , AIP Publishing , International Conference on Crystalline Silicon Photovoltaics , Leuven , Belgium , 08/04/2019 . https://doi.org/10.1063/1.5123852en
dc.identifier.doi10.1063/1.5123852en_US
dc.identifier.issn0094-243X
dc.identifier.issn1551-7616
dc.identifier.otherPURE UUID: 0e479776-093a-4e9d-a3d9-aacbb5e42b72en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/0e479776-093a-4e9d-a3d9-aacbb5e42b72en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/133845295/ELEC_Heikkinen_Stability_proceedings_accepted.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/40277
dc.identifier.urnURN:NBN:fi:aalto-201909205303
dc.language.isoenen
dc.publisherAMERICAN INSTITUTE OF PHYSICS
dc.relation.ispartofseriesAIP CONFERENCE PROCEEDINGSen
dc.relation.ispartofseriesVolume 2147, issue 1en
dc.rightsopenAccessen
dc.titleStability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditionsen
dc.typeConference article in proceedingsfi
dc.type.versionacceptedVersion
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