Room-temperature method for minimizing light-induced degradation in crystalline silicon

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Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/apl

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Volume Title

School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2012

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Mcode

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Language

en

Pages

3

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Applied Physics Letters, Vol. 101, Issue 24

Abstract

Although light-induced degradation (LID) in crystalline silicon is attributed to the formation of boron-oxygen recombination centers, copper contamination of silicon has recently been observed to result in similar degradation. As positively charged interstitialcopper stays mobile at room temperature in silicon, we show that the bulk copper concentration can be reduced by depositing a large negative charge onto the wafer surface. Consequently, light-induced degradation is reduced significantly in both low- and high-resistivity boron-doped Czochralski-grown silicon.

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Keywords

copper contamination, crystalline silicon, light-induced degradation, LID, solar cells, illumination, wafer, surface charge, room-temperature

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Citation

Lindroos, Jeanette & Yli-koski, Marko & Haarahiltunen, Antti & Savin, Hele. 2012. Room-temperature method for minimizing light-induced degradation in crystalline silicon. Applied Physics Letters. Vol. 101, Issue 24. 0003-6951 (printed). DOI: 10.1063/1.4769809.