Room-temperature method for minimizing light-induced degradation in crystalline silicon
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Applied Physics Letters, Vol. 101, Issue 24
AbstractAlthough light-induced degradation (LID) in crystalline silicon is attributed to the formation of boron-oxygen recombination centers, copper contamination of silicon has recently been observed to result in similar degradation. As positively charged interstitialcopper stays mobile at room temperature in silicon, we show that the bulk copper concentration can be reduced by depositing a large negative charge onto the wafer surface. Consequently, light-induced degradation is reduced significantly in both low- and high-resistivity boron-doped Czochralski-grown silicon.
copper contamination, crystalline silicon, light-induced degradation, LID, solar cells, illumination, wafer, surface charge, room-temperature
Lindroos, Jeanette & Yli-koski, Marko & Haarahiltunen, Antti & Savin, Hele. 2012. Room-temperature method for minimizing light-induced degradation in crystalline silicon. Applied Physics Letters. Vol. 101, Issue 24. 0003-6951 (printed). DOI: 10.1063/1.4769809.