Room-temperature method for minimizing light-induced degradation in crystalline silicon

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2012
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
Series
Applied Physics Letters, Vol. 101, Issue 24
Abstract
Although light-induced degradation (LID) in crystalline silicon is attributed to the formation of boron-oxygen recombination centers, copper contamination of silicon has recently been observed to result in similar degradation. As positively charged interstitialcopper stays mobile at room temperature in silicon, we show that the bulk copper concentration can be reduced by depositing a large negative charge onto the wafer surface. Consequently, light-induced degradation is reduced significantly in both low- and high-resistivity boron-doped Czochralski-grown silicon.
Description
Keywords
copper contamination, crystalline silicon, light-induced degradation, LID, solar cells, illumination, wafer, surface charge, room-temperature
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Citation
Lindroos, Jeanette & Yli-koski, Marko & Haarahiltunen, Antti & Savin, Hele. 2012. Room-temperature method for minimizing light-induced degradation in crystalline silicon. Applied Physics Letters. Vol. 101, Issue 24. 0003-6951 (printed). DOI: 10.1063/1.4769809.