On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014
Department
Department of Materials Science and Engineering
Department of Chemical and Metallurgical Engineering
Department of Chemistry and Materials Science
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Mcode
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Language
en
Pages
6
1-6
Series
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, Volume 32, issue 1
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DOI
10.1116/1.4842655
Citation
Liu , X , Haimi , E , Hannula , S-P , Ylivaara , O M E & Puurunen , R L 2014 , ' On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition ' , JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A , vol. 32 , no. 1 , 01A116 , pp. 1-6 . https://doi.org/10.1116/1.4842655
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https://urn.fi/URN:NBN:fi:aalto-201808014254
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[article-cris] Kemian tekniikan korkeakoulu / CHEM