Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTengborn, E.
dc.contributor.authorRummukainen, M.
dc.contributor.authorTuomisto, Filip
dc.contributor.authorSaarinen, K.
dc.contributor.authorRudzinski, M.
dc.contributor.authorHageman, P. R.
dc.contributor.authorLarsen, P. K.
dc.contributor.authorNordlund, A.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-08-19T09:01:17Z
dc.date.available2015-08-19T09:01:17Z
dc.date.issued2006
dc.description.abstractPositron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation.en
dc.description.versionPeer revieweden
dc.format.extent091905/1-3
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTengborn, E. & Rummukainen, M. & Tuomisto, Filip & Saarinen, K. & Rudzinski, M. & Hageman, P. R. & Larsen, P. K. & Nordlund, A. 2006. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters. Volume 89, Issue 9. 091905/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2338887en
dc.identifier.doi10.1063/1.2338887
dc.identifier.issn0003-6951 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17481
dc.identifier.urnURN:NBN:fi:aalto-201508184099
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 89, Issue 9
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 89, Issue 9 and may be found at http://scitation.aip.org/content/aip/journal/apl/89/9/10.1063/1.2338887.en
dc.rights.holderAIP Publishing
dc.subject.keywordGaNen
dc.subject.keywordmisorienteden
dc.subject.keywordvacanciesen
dc.subject.keywordpositronsen
dc.subject.keywordannihilationen
dc.subject.otherPhysicsen
dc.titleEffect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor depositionen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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