Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2006
Major/Subject
Mcode
Degree programme
Language
en
Pages
091905/1-3
Series
Applied Physics Letters, Volume 89, Issue 9
Abstract
Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation.
Description
Keywords
GaN, misoriented, vacancies, positrons, annihilation
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Citation
Tengborn, E. & Rummukainen, M. & Tuomisto, Filip & Saarinen, K. & Rudzinski, M. & Hageman, P. R. & Larsen, P. K. & Nordlund, A. 2006. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters. Volume 89, Issue 9. 091905/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2338887