Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition
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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 89, Issue 9 and may be found at http://scitation.aip.org/content/aip/journal/apl/89/9/10.1063/1.2338887.
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en
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091905/1-3
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Applied Physics Letters, Volume 89, Issue 9
Abstract
Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation.Description
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Tengborn, E. & Rummukainen, M. & Tuomisto, Filip & Saarinen, K. & Rudzinski, M. & Hageman, P. R. & Larsen, P. K. & Nordlund, A. 2006. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters. Volume 89, Issue 9. 091905/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2338887