Boron doping in gallium oxide from first principles
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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11
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Journal of Physics Communications, Volume 4, issue 12, pp. 1-11
Abstract
We study the feasibility of boron doping in gallium oxide (Ga2O3) for neutron detection. Ga2O3 is a wide band gap, radiation-hard material with potential for neutron detection, if it can be doped with a neutron active element. We investigate the boron-10 isotope as possible neutron active dopant. Intrinsic and boron induced defects in Ga2O3 are studied with semi-local and hybrid density-functional-theory calculations. We find that it is possible to introduce boron into gallium sites at moderate concentrations. High concentrations of boron, however, compete with the boron-oxide formation.Description
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Lehtomäki, J, Li, J & Rinke, P 2020, 'Boron doping in gallium oxide from first principles', Journal of Physics Communications, vol. 4, no. 12, 125001, pp. 1-11. https://doi.org/10.1088/2399-6528/abcd74