On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSadi, Toufik
dc.contributor.authorKivisaari, Pyry
dc.contributor.authorOksanen, Jani
dc.contributor.authorTulkki, Jukka
dc.contributor.departmentBECS
dc.date.accessioned2018-08-01T13:33:17Z
dc.date.available2018-08-01T13:33:17Z
dc.date.issued2014-09-01
dc.description.abstractRecent experiments presented in by Iveland et al. [Phys. Rev. Lett. 110, 177406 (2013)] demonstrated that hot electron emission from cesiated p-contacts of III-nitride quantum-well (QW) light-emitting diodes (LEDs) coincides with the onset of the efficiency droop. We have carried out Monte Carlo simulations of hot-electron transport in realistic III-N LEDs. The simulations account for the hole population and all relevant electron scattering and recombination processes. We show that Auger recombination generates a significant hot electron population, which is temporarily trapped in the conduction band side-valleys, without decaying completely before reaching the p-contact. The leakage current due to electron overflow and thermal escape from the QWs is shown to have a minimal impact on the droop. We conclude that the experimentally observed hot electrons are created by Auger recombination in QWs, and that the Auger effect as the origin of the droop is the only consistent explanation for the experimental findings of Iveland et al., [Phys. Rev. Lett. 110, 177406 (2013)].en
dc.description.versionPeer revieweden
dc.format.extent1-5
dc.format.mimetypeapplication/pdf
dc.identifier.citationSadi , T , Kivisaari , P , Oksanen , J & Tulkki , J 2014 , ' On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes ' , Applied Physics Letters , vol. 105 , no. 9 , 091106 , pp. 1-5 . https://doi.org/10.1063/1.4894862en
dc.identifier.doi10.1063/1.4894862
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: bc70efa2-1b22-4806-8b0b-dbe496e703c1
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dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/32892
dc.identifier.urnURN:NBN:fi:aalto-201808014293
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 105, issue 9en
dc.rightsopenAccessen
dc.titleOn the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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