Low-T anneal as cure for LeTID in Mc-Si PERC cells

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorYli-Koski, Markoen_US
dc.contributor.authorPasanen, Toni P.en_US
dc.contributor.authorHeikkinen, Ismoen_US
dc.contributor.authorSerué, Michaelen_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.departmentHele Savin Groupen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.date.accessioned2019-09-20T11:13:18Z
dc.date.available2019-09-20T11:13:18Z
dc.date.issued2019-08-27en_US
dc.description| openaire: EC/FP7/307315/EU//SOLARX
dc.description.abstractLight and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationYli-Koski , M , Pasanen , T P , Heikkinen , I , Serué , M & Savin , H 2019 , Low-T anneal as cure for LeTID in Mc-Si PERC cells . in SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics . 1 edn , vol. 2147 , AIP Conference Proceedings , AIP Publishing , International Conference on Crystalline Silicon Photovoltaics , Leuven , Belgium , 08/04/2019 . https://doi.org/10.1063/1.5123900en
dc.identifier.doi10.1063/1.5123900en_US
dc.identifier.issn0094-243X
dc.identifier.issn1551-7616
dc.identifier.otherPURE UUID: 87ae6cf4-6bc3-4971-81b9-91c0615d5d08en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/87ae6cf4-6bc3-4971-81b9-91c0615d5d08en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/133845692/SiPV2019_proceedings_Low_T_anneal_as_cure_for_LeTID_in_mc_Si_PERC_cells.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/40326
dc.identifier.urnURN:NBN:fi:aalto-201909205352
dc.language.isoenen
dc.publisherAMERICAN INSTITUTE OF PHYSICS
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/307315/EU//SOLARXen_US
dc.relation.ispartofseriesAIP CONFERENCE PROCEEDINGSen
dc.relation.ispartofseriesVolume 2147, issue 1en
dc.rightsopenAccessen
dc.titleLow-T anneal as cure for LeTID in Mc-Si PERC cellsen
dc.typeConference article in proceedingsfi
dc.type.versionacceptedVersion
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