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Accelerated light-induced degradation for detecting copper contamination in p-type silicon
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© 2015 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters. Volume 107, Issue 5, and may be found at http://scitation.aip.org/content/aip/journal/apl/107/5/10.1063/1.4927838.
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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052101
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Applied Physics Letters, Volume 107, Issue 5
Abstract
Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.
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Inglese, Alessandro & Lindroos, Jeanette & Savin, Hele. 2015. Accelerated light-induced degradation for detecting copper contamination in p-type silicon. Applied Physics Letters. Volume 107, Issue 5. 052101. ISSN 0003-6951 (printed). DOI: 10.1063/1.4927838.