MOVPE growth of GaN on patterned 6-inch Si wafer

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2020-04-20
Major/Subject
Mcode
Degree programme
Language
en
Pages
45010
Series
Journal of Physics Communications, Volume 4, issue 4
Abstract
We demonstrate that thicker layers can be achieved in gallium nitride (GaN) epitaxy by using a patterned silicon (Si) substrate compared to a planar Si substrate. GaN films were grown by metalorganic vapour-phase epitaxy on 6-inch Si (111) substrates patterned with arrays of squares with various corner shapes, height and lateral dimensions. Stress spatial distributions in the GaN pattern units were mapped out using confocal Raman spectroscopy. It was found that the corner shapes have an effect on the uniformity of the stress distribution. Patterns with round corners were found to have more uniform stress distribution than those with sharp corners. The largest crack-free square size for a 1.5 μm thick GaN film is 500 × 500 μm2.
Description
Keywords
GaN, gallium nitride, MOVPE, Raman analysis, stress distribution, patterned silicon
Other note
Citation
Kim , I , Holmi , J , Raju , R , Haapalinna , A & Suihkonen , S 2020 , ' MOVPE growth of GaN on patterned 6-inch Si wafer ' , Journal of Physics Communications , vol. 4 , no. 4 , 045010 , pp. 1-10 . https://doi.org/10.1088/2399-6528/ab885c