Do Arsenic Interstitials Really Exist in As-Rich GaAs?

Loading...
Thumbnail Image

Access rights

© 2001 American Physical Society (APS).

URL

Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2001

Major/Subject

Mcode

Degree programme

Language

en

Pages

045504/1-4

Series

Physical Review Letters, Volume 87, Issue 4

Abstract

To investigate the lattice distortion caused by point defects in As-rich GaAs, we make use of a self-consistent-charge density-functional based tight-binding method. Both relevant defects, the As antisite and the As interstitial, cause significant lattice distortion. In contrast to As interstitials, isolated As antisites lead to lattice strain as well as displacement of nearest neighbor As lattice atoms into the ⟨110⟩ channels, in excellent agreement with experiments. Therefore, our result gives powerful evidence for As antisites being the dominating defect in as-grown As-rich GaAs.

Description

Keywords

As-rich GaAs, point defects, lattice distortion

Other note

Citation

Staab, T. E. M. & Nieminen, Risto M. & Gebauer, J. & Krause-Rehberg, R. & Luysberg, M. & Haugk, M. & Frauenheim, Th.. 2001. Do Arsenic Interstitials Really Exist in As-Rich GaAs?. Physical Review Letters. Volume 87, Issue 4. 045504/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.87.045504.