Undoped p-type GaN1-xSbx alloys

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSegercrantz, N.
dc.contributor.authorBaumgartner, Y.
dc.contributor.authorTing, M.
dc.contributor.authorYu, K. M.
dc.contributor.authorMao, S. S.
dc.contributor.authorSarney, W. L.
dc.contributor.authorSvensson, S. P.
dc.contributor.authorWalukiewicz, W.
dc.contributor.departmentDepartment of Applied Physics
dc.contributor.departmentSwiss Federal Institute of Technology Lausanne
dc.contributor.departmentUniversity of California Berkeley
dc.contributor.departmentCity University of Hong Kong
dc.contributor.departmentUnited States Army Research Laboratory
dc.contributor.departmentLawrence Berkeley National Laboratory
dc.date.accessioned2018-08-01T12:39:35Z
dc.date.available2018-08-01T12:39:35Z
dc.date.issued2016-12-19
dc.description.abstractWe report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.en
dc.description.versionPeer revieweden
dc.format.extent1-5
dc.format.mimetypeapplication/pdf
dc.identifier.citationSegercrantz , N , Baumgartner , Y , Ting , M , Yu , K M , Mao , S S , Sarney , W L , Svensson , S P & Walukiewicz , W 2016 , ' Undoped p-type GaN 1-x Sb x alloys : Effects of annealing ' , Applied Physics Letters , vol. 109 , no. 25 , 252102 , pp. 1-5 . https://doi.org/10.1063/1.4972559en
dc.identifier.doi10.1063/1.4972559
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 2712c826-892c-491c-8707-d80de0d4f325
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dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/32703
dc.identifier.urnURN:NBN:fi:aalto-201808014103
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 109, issue 25en
dc.rightsopenAccessen
dc.titleUndoped p-type GaN1-xSbx alloysen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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