Undoped p-type GaN1-xSbx alloys: Effects of annealing
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Applied Physics Letters, Volume 109, issue 25, pp. 1-5
Abstract
We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.Description
Keywords
Other note
Citation
Segercrantz, N, Baumgartner, Y, Ting, M, Yu, K M, Mao, S S, Sarney, W L, Svensson, S P & Walukiewicz, W 2016, 'Undoped p-type GaN 1-x Sb x alloys : Effects of annealing', Applied Physics Letters, vol. 109, no. 25, 252102, pp. 1-5. https://doi.org/10.1063/1.4972559