Undoped p-type GaN1-xSbx alloys

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2016-12-19
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Mcode
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Language
en
Pages
1-5
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Applied Physics Letters, Volume 109, issue 25
Abstract
We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.
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Segercrantz , N , Baumgartner , Y , Ting , M , Yu , K M , Mao , S S , Sarney , W L , Svensson , S P & Walukiewicz , W 2016 , ' Undoped p-type GaN 1-x Sb x alloys : Effects of annealing ' , Applied Physics Letters , vol. 109 , no. 25 , 252102 , pp. 1-5 . https://doi.org/10.1063/1.4972559