Spin disorder scattering in a ferromagnetic insulator-on-graphene structure

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© 2013 Wiley-Blackwell. This is the post print version of the following article: Savin, H. & Kuivalainen, P. & Lebedeva, N. & Novikov, S. 2013. Spin disorder scattering in a ferromagnetic insulator-on-graphene structure. Physica Status Solidi B. Volume 251, Issue 2. 407-414. DOI: 10.1002/pssb.201350024, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssb.201350024/abstract.
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2013
Major/Subject
Mcode
Degree programme
Language
en
Pages
407-414
Series
Physica Status Solidi B, Volume 251, Issue 2
Abstract
We theoretically study the transport properties of a single graphene layer between two insulating materials, i.e., a ferromagnetic EuO thin film and a nonmagnetic SiC substrate. An exchange interaction between the charge carrier spins in graphene and the localized magnetic moments in the ferromagnetic insulator is assumed. This proximity effect and the large spin fluctuations at temperatures close to the ferromagnetic transition temperature TC lead to spin disorder scattering, which is calculated using a Green's function technique. Numerical results indicate that at temperatures close to TC the contribution of the spin disorder scattering to the total electron mobility is clearly observable even in the case of a weak exchange interaction and a low background mobility of the graphene layer. This enables the experimental determination of the exchange interaction parameter using the present model and a simple resistivity measurement.
Description
Keywords
critical scattering, ferromagnetism, graphene, magnetic semiconductors, quantum transport
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Citation
Savin, H. & Kuivalainen, P. & Lebedeva, N. & Novikov, S.. 2013. Spin disorder scattering in a ferromagnetic insulator-on-graphene structure. Physica Status Solidi B. Volume 251, Issue 2. 407-414. DOI: 10.1002/pssb.201350024.