Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO2 Thin Films

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTripathi, Tripurari S.en_US
dc.contributor.authorKarppinen, Maariten_US
dc.contributor.departmentDepartment of Chemistryen
dc.date.accessioned2017-03-28T11:49:18Z
dc.date.available2017-03-28T11:49:18Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2017-12-31en_US
dc.date.issued2017-06en_US
dc.description| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
dc.description.abstractMagnesium-substituted CuCrO2 delafossite is a promising candidate for p-type transparent conducting oxide applications owing to its relatively high electrical conductivity and optical transparency in the visible range. Here, the atomic layer deposition fabrication of semiconducting Cu(Cr1- xMgx)O2 (up to x = 0.043) thin films based on Cu(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), Cr(acac)3 (acac = acetyl acetonate), and Mg(thd)2 as metal precursors and ozone as the oxygen source is reported. Smooth and homogeneous thin films with an accurately controlled Mg content are obtained at the deposition temperature of 250 °C. A limited substitution level is revealed from X-diffraction patterns: peaks due to the spinel-structured MgCr2O4 secondary phase appear for x ≥ 0.015 while the increase in lattice parameters of the delafossite Cu(Cr,Mg)O2 phase continues even up to x ≈ 0.03. The direct bandgap as determined from UV-vis spectrophotometric measurements is observed to decrease from 3.09 eV for x = 0 to 2.87 eV for x = 0.015 before increasing to 3.15 eV for x = 0.043. The observed transmittance is close to 80% in the visible range. These characteristics are superior to the thin films of the copper delafossite family prepared by any thin-film technique.en
dc.description.versionPeer revieweden
dc.format.extent7
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationTripathi, T S & Karppinen, M 2017, ' Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO 2 Thin Films ', Advanced Electronic Materials, vol. 3, no. 6, 1600341 . https://doi.org/10.1002/aelm.201600341en
dc.identifier.doi10.1002/aelm.201600341en_US
dc.identifier.issn2199-160X
dc.identifier.otherPURE UUID: 0bb1dfcc-4d3b-4383-97e3-f9dc53e6a22een_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/0bb1dfcc-4d3b-4383-97e3-f9dc53e6a22een_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85007477389&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/11380018/ERC_28_accepted.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/24976
dc.identifier.urnURN:NBN:fi:aalto-201703283215
dc.language.isoenen
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/339478/EU//LAYERENG-HYBMATen_US
dc.relation.ispartofseriesAdvanced Electronic Materialsen
dc.rightsopenAccessen
dc.subject.keywordAtomic layer depositionen_US
dc.subject.keywordDelafossitesen_US
dc.subject.keywordMagnesium-substituted CuCrOen_US
dc.subject.keywordP-type transparent conducting oxidesen_US
dc.titleEnhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO2 Thin Filmsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
Files