Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSun, Yunen_US
dc.contributor.authorLi, Pengpengen_US
dc.contributor.authorKauppinen, Esko I.en_US
dc.contributor.authorSun, Dong Mingen_US
dc.contributor.authorOhno, Yutakaen_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorNanoMaterialsen
dc.contributor.organizationCAS - Institute of Metal Researchen_US
dc.contributor.organizationNagoya Universityen_US
dc.date.accessioned2022-08-10T08:15:00Z
dc.date.available2022-08-10T08:15:00Z
dc.date.issued2022-06-01en_US
dc.descriptionFunding Information: This work was supported by the National Natural Science Foundation of China (62125406), the National Key Research and Development Program of China (2021YFA1200013), the Key-Area Research and Development Program of Guangdong Province (2019B010934001), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (ZDBS-LY-JSC027), R&D promotion scheme funding international joint research promoted by National Institute of Information and Communications Technology (NICT), Japan, and the Aalto University MIDE program via the CNB-E project and partially supported by the Academy of Finland (Pr. No. 128445). Publisher Copyright: © 2022 The Royal Society of Chemistry
dc.description.abstractApproximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107-108 are realized for CNT TFTs with mobility of ∼500 cm2 V−1 s−1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.en
dc.description.versionPeer revieweden
dc.format.extent5
dc.format.extent16291-16295
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationSun, Y, Li, P, Kauppinen, E I, Sun, D M & Ohno, Y 2022, ' Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks ', RSC Advances, vol. 12, no. 25, pp. 16291-16295 . https://doi.org/10.1039/d2ra02088ben
dc.identifier.doi10.1039/d2ra02088ben_US
dc.identifier.issn2046-2069
dc.identifier.otherPURE UUID: 1fa88d75-d01c-4990-b132-7e9371005a02en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/1fa88d75-d01c-4990-b132-7e9371005a02en_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85132991805&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/85746355/Key_factors_for_ultra_high_on_off_ratio_thin_film_transistors_using_as_grown_carbon_nanotube_networks.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/115692
dc.identifier.urnURN:NBN:fi:aalto-202208104514
dc.language.isoenen
dc.publisherRoyal Society of Chemistry
dc.relation.ispartofseriesRSC Advancesen
dc.relation.ispartofseriesVolume 12, issue 25en
dc.rightsopenAccessen
dc.titleKey factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networksen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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