Effect of sodium incorporation into CuInSe2 from first principles

Loading...
Thumbnail Image

Access rights

© 2013 American Institute of Physics. This is the accepted version of the following article: Oikkonen, L. E. & Ganchenkova, M. G. & Seitsonen, A. P. & Nieminen, Risto M. 2013. Effect of sodium incorporation into CuInSe2 from first principles. Journal of Applied Physics. Volume 114, Issue 8. 083503/1-5. ISSN 0021-8979 (printed). DOI: 10.1063/1.4819105, which has been published in final form at http://scitation.aip.org/content/aip/journal/jap/114/8/10.1063/1.4819105.
Final published version

URL

Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2013

Major/Subject

Mcode

Degree programme

Language

en

Pages

083503/1-5

Series

Journal of Applied Physics, Volume 114, Issue 8

Abstract

The presence of small amounts of sodium has been shown to improve the electronic performance of Cu(In,Ga)Se2 (CIGS) solar cells, but the origins of this effect have not yet been fully resolved. In this work, we have addressed the questions involving the role of sodium in CuInSe2 (CIS) using density-functional-theory-based calculations. We find no direct way how the creation of Na-related point defects in bulk CIS would enhance p-type conductivity. Instead, we demonstrate that Na reduces copper mass transport due to the capture of copper vacancies by NaCu defects. This finding provides an explanation for experimental measurements where the presence of Na has been observed to decrease copper diffusion. The suggested mechanism can also impede VCu -related cluster formation and lead to measurable effects on defect distribution within the material.

Description

Keywords

sodium, CuInSe2, density-functional theory

Other note

Citation

Oikkonen, L. E. & Ganchenkova, M. G. & Seitsonen, A. P. & Nieminen, Risto M. 2013. Effect of sodium incorporation into CuInSe2 from first principles. Journal of Applied Physics. Volume 114, Issue 8. 083503/1-5. ISSN 0021-8979 (printed). DOI: 10.1063/1.4819105.