Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorOtt, Jennifer
dc.contributor.authorGädda, A.
dc.contributor.authorBharthuar, S.
dc.contributor.authorBrücken, E.
dc.contributor.authorGolovleva, M.
dc.contributor.authorHärkönen, J.
dc.contributor.authorKalliokoski, M.
dc.contributor.authorKaradzhinova-Ferrer, A.
dc.contributor.authorKirschenmann, S.
dc.contributor.authorLitichevskyi, V.
dc.contributor.authorLuukka, P.
dc.contributor.authorMartikainen, L.
dc.contributor.authorNaaranoja, T.
dc.contributor.departmentHele Savin Group
dc.contributor.departmentAdvacam Oy
dc.contributor.departmentUniversity of Helsinki
dc.contributor.departmentRuder Boskovic Institute
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.date.accessioned2021-03-31T06:12:22Z
dc.date.available2021-03-31T06:12:22Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2022-04-01
dc.date.issued2020-04-01
dc.description.abstractWe report on the fabrication of capacitively (AC) coupled n+-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors. Devices obtained by the above mentioned process are characterized by capacitance–voltage and current–voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform chargecollection efficiency over large areas of pixels, and acceptable leakage current densities.en
dc.description.versionPeer revieweden
dc.format.extent6
dc.identifier.citationOtt , J , Gädda , A , Bharthuar , S , Brücken , E , Golovleva , M , Härkönen , J , Kalliokoski , M , Karadzhinova-Ferrer , A , Kirschenmann , S , Litichevskyi , V , Luukka , P , Martikainen , L & Naaranoja , T 2020 , ' Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide ' , Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , vol. 958 , 162547 . https://doi.org/10.1016/j.nima.2019.162547en
dc.identifier.doi10.1016/j.nima.2019.162547
dc.identifier.issn0168-9002
dc.identifier.issn1872-9576
dc.identifier.otherPURE UUID: 1cfeec68-be6d-4ff5-8f1a-b88c4de3cc27
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/1cfeec68-be6d-4ff5-8f1a-b88c4de3cc27
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85070678651&partnerID=8YFLogxK
dc.identifier.otherPURE LINK: https://researchportal.helsinki.fi/fi/publications/1c82719b-9ff9-412f-9dc6-c07056652237
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/103379
dc.identifier.urnURN:NBN:fi:aalto-202103312652
dc.language.isoenen
dc.publisherElsevier
dc.relation.ispartofseriesNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipmenten
dc.relation.ispartofseriesVolume 958en
dc.rightsopenAccessen
dc.subject.keywordAlO
dc.subject.keywordAtomic layer deposition (ALD)
dc.subject.keywordCapacitive coupling
dc.subject.keywordPixel detector
dc.titleProcessing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxideen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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