Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHynninen, Teemu
dc.contributor.authorGosálvez, Miguel A.
dc.contributor.authorFoster, Adam S.
dc.contributor.authorTanaka, Hiroshi
dc.contributor.authorSato, Kazuo
dc.contributor.authorUwaha, Makio
dc.contributor.authorNieminen, Risto M.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-08-13T09:01:33Z
dc.date.available2015-08-13T09:01:33Z
dc.date.issued2008
dc.description.abstractWe simulate the formation of experimentally observed trapezoidal hillocks on etched Si(110) surfaces, describing their generic geometrical shape and analyzing the relative stability and/or reactivity of the key surface sites. In our model, the hillocks are stabilized by Cu impurities in the etchant adsorbing on the surface and acting as pinning agents. A model of random adsorptions will not result in hillock formation since a single impurity is easily removed from the surface. Instead a whole cluster of Cu atoms is needed as a mask to stabilize a hillock. Therefore we propose and analyze mechanisms that drive correlated adsorptions and lead to stable Cu clusters.en
dc.description.versionPeer revieweden
dc.format.extent013033/1-19
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHynninen, Teemu & Gosálvez, Miguel A. & Foster, Adam S. & Tanaka, Hiroshi & Sato, Kazuo & Uwaha, Makio & Nieminen, Risto M.. 2008. Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks. New Journal of Physics. Volume 10, Issue 1. 013033/1-19. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/1/013033.en
dc.identifier.doi10.1088/1367-2630/10/1/013033
dc.identifier.issn1367-2630 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17417
dc.identifier.urnURN:NBN:fi:aalto-201508124026
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.ispartofseriesNew Journal of Physicsen
dc.relation.ispartofseriesVolume 10, Issue 1
dc.rights© 2008 IOP Publishing. This is the accepted version of the following article: Hynninen, Teemu & Gosálvez, Miguel A. & Foster, Adam S. & Tanaka, Hiroshi & Sato, Kazuo & Uwaha, Makio & Nieminen, Risto M.. 2008. Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks. New Journal of Physics. Volume 10, Issue 1. 013033/1-19. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/1/013033, which has been published in final form at http://iopscience.iop.org/1367-2630/10/1/013033. This work is distributed under the Creative Commons Attribution 3.0 License (https://creativecommons.org/licenses/by/3.0/).en
dc.rights.holderIOP Publishing
dc.subject.keywordetchingen
dc.subject.keywordsiliconen
dc.subject.keywordhillocksen
dc.subject.keywordsurface morphologyen
dc.subject.keywordCu clustersen
dc.subject.otherPhysicsen
dc.titleEffect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocksen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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