Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2008
Major/Subject
Mcode
Degree programme
Language
en
Pages
013033/1-19
Series
New Journal of Physics, Volume 10, Issue 1
Abstract
We simulate the formation of experimentally observed trapezoidal hillocks on etched Si(110) surfaces, describing their generic geometrical shape and analyzing the relative stability and/or reactivity of the key surface sites. In our model, the hillocks are stabilized by Cu impurities in the etchant adsorbing on the surface and acting as pinning agents. A model of random adsorptions will not result in hillock formation since a single impurity is easily removed from the surface. Instead a whole cluster of Cu atoms is needed as a mask to stabilize a hillock. Therefore we propose and analyze mechanisms that drive correlated adsorptions and lead to stable Cu clusters.
Description
Keywords
etching, silicon, hillocks, surface morphology, Cu clusters
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Citation
Hynninen, Teemu & Gosálvez, Miguel A. & Foster, Adam S. & Tanaka, Hiroshi & Sato, Kazuo & Uwaha, Makio & Nieminen, Risto M.. 2008. Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks. New Journal of Physics. Volume 10, Issue 1. 013033/1-19. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/1/013033.