Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKhanam, Afrina
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorTuomisto, Filip
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorPopovici, Mihaela
dc.contributor.authorKar, Gouri Sankar
dc.contributor.departmentDepartment of Applied Physics
dc.contributor.departmentAntimatter and Nuclear Engineering
dc.contributor.departmentUniversity of Helsinki
dc.contributor.departmentIMEC Vzw
dc.date.accessioned2022-07-01T08:12:13Z
dc.date.available2022-07-01T08:12:13Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2023-06-24
dc.date.issued2022-06-24
dc.description.abstractPositron annihilation signals from VMCO-like samples grown by atomic layer deposition at different temperatures are utilized for the characterization of differences in open volume defects in TiN/TiO2/a-Si heterostructures. Doppler and coincidence Doppler mode of positron annihilation spectroscopy combined with a monoenergetic positron beam were used for this study. Differences observed in the Doppler parameters indicate differences in the positron trapping states of the TiO2 epilayers grown at different temperatures. Furthermore, the coincidence-Doppler results show that these differences cannot be due to intermixing of the TiO2 and a-Si layers and formation of thin SiO2 layers at the interface during the growth process. The results indicate that the amount of open volume defects in the TiO2 layer of the VMCO-structure seems to increase with an increase in the growth temperature.en
dc.description.versionPeer revieweden
dc.format.extent6
dc.format.mimetypeapplication/pdf
dc.identifier.citationKhanam , A , Slotte , J , Tuomisto , F , Subhechha , S , Popovici , M & Kar , G S 2022 , ' Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy ' , Journal of Applied Physics , vol. 131 , no. 24 , 245301 . https://doi.org/10.1063/5.0094558en
dc.identifier.doi10.1063/5.0094558
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.otherPURE UUID: 5a6fb5e0-42b3-49cd-830d-aff049f7e526
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/5a6fb5e0-42b3-49cd-830d-aff049f7e526
dc.identifier.otherPURE LINK: https://aip.scitation.org/doi/pdf/10.1063/5.0094558
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85133217461&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/84962326/SCI_Khanam_etal_Journal_of_Applied_Physics_2022.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/115489
dc.identifier.urnURN:NBN:fi:aalto-202207014329
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 131, issue 245301en
dc.rightsopenAccessen
dc.subject.keywordPAS
dc.subject.keywordOpen volume defect
dc.subject.keywordTIO2 FILM
dc.titleOpen volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopyen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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