Vacancy-type defects in strained Si1-xGex layers studied by positron annihilation spectroscopy



Title:	Vacancy-type defects in strained Si1-xGex layers studied by positron annihilation spectroscopy Vakanssivirheiden tutkiminen jännitetyissä Si1-xGex-kerroksissa positroniannihilaatiospektroskopialla
Author(s):	Sihto, Sanna-Liisa
Date:	2003
Language:	fi
Pages:	103
Department:	Teknillisen fysiikan ja matematiikan osasto
Major/Subject:	Fysiikka
Supervising professor(s):	Saarinen, Kimmo
Thesis advisor(s):	Slotte, Jonatan
Keywords:	silicon-germanium, piigermanium, vacancy, vakanssi, V-P pair, V-P-pari, E-center, E-keskus, migration, migraatio, positron annihilation spectroscopy, positroniannihilaatiospektroskopia
Location:	Archive
	OEVS yes
Digitized thesis:	ask
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Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-2020120449756 Email this Export to RefWorks QR Code Print BibTex Tweet