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Showing 10 out of a total of 54 results for community: 6a Artikkelit / Articles. (0.078 seconds)

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In vacancies in InN grown by plasma-assisted molecular beam epitaxy

Reurings, Floris; Tuomisto, Filip; Gallinat, Chad S.; Koblmuller, Gregor; Speck, James S. (AIP Publishing, 2010)

Applied Physics Letters, Volume 97, Issue 25
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Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO

Børseth, T. Moe; Tuomisto, Filip; Christensen, J. S.; Skorupa, W.; Monakhov, E. V.; Svensson, B. G.; Kuznetsov, A. Yu. (American Physical Society (APS), 2006)

Physical Review B, Volume 74, Issue 16
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Low energy electron beam induced vacancy activation in GaN

Nykänen, H.; Suihkonen, S.; Kilanski, L.; Sopanen, M.; Tuomisto, Filip (AIP Publishing, 2012)

Applied Physics Letters, Volume 100, Issue 12
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Self-compensation in highly n-type InN

Rauch, C.; Tuomisto, Filip; King, P. D. C.; Veal, T. D.; Lu, H.; Schaff, W. J. (AIP Publishing, 2012)

Applied Physics Letters, Volume 101, Issue 1
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Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon

Kuitunen, K.; Saarinen, K.; Tuomisto, Filip (American Physical Society (APS), 2007)

Physical Review B, Volume 75, Issue 4
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Magnetically active vacancy related defects in irradiated GaN layers

Kilanski, L.; Tuomisto, Filip; Szymczak, R.; Kruszka, R. (AIP Publishing, 2012)

Applied Physics Letters, Volume 101, Issue 7
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Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO

Tuomisto, Filip; Ranki, V.; Saarinen, K.; Look, D C. (American Physical Society (APS), 2003)

Physical Review Letters, Volume 91, Issue 20
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Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films

Slotte, J.; Tuomisto, Filip; Saarinen, K.; Moe, C. G.; Keller, S.; DenBaars, S. P. (AIP Publishing, 2007)

Applied Physics Letters, Volume 90, Issue 15
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Defect identification in semiconductors with positron annihilation: Experiment and theory

Tuomisto, Filip; Makkonen, Ilja (American Physical Society (APS), 2013)

Reviews of Modern Physics, Volume 85, Issue 4
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Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

Koblmuller, G.; Reurings, F.; Tuomisto, Filip; Speck, J. S. (AIP Publishing, 2010)

Applied Physics Letters, Volume 97, Issue 19
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