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High performance complementary WS2devices with hybrid Gr/Ni contacts

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Khan, Muhammad Farooq
dc.contributor.author Ahmed, Faisal
dc.contributor.author Rehman, Shania
dc.contributor.author Akhtar, Imtisal
dc.contributor.author Rehman, Malik Abdul
dc.contributor.author Shinde, Pragati A.
dc.contributor.author Khan, Karim
dc.contributor.author Kim, Deok Kee
dc.contributor.author Eom, Jonghwa
dc.contributor.author Lipsanen, Harri
dc.contributor.author Sun, Zhipei
dc.date.accessioned 2020-11-30T08:20:26Z
dc.date.available 2020-11-30T08:20:26Z
dc.date.issued 2020-11-07
dc.identifier.citation Khan , M F , Ahmed , F , Rehman , S , Akhtar , I , Rehman , M A , Shinde , P A , Khan , K , Kim , D K , Eom , J , Lipsanen , H & Sun , Z 2020 , ' High performance complementary WS 2 devices with hybrid Gr/Ni contacts ' , Nanoscale , vol. 12 , no. 41 , pp. 21280-21290 . https://doi.org/10.1039/d0nr05737a en
dc.identifier.issn 2040-3364
dc.identifier.issn 2040-3372
dc.identifier.other PURE UUID: e6df39ca-d1a3-4678-ba7c-41b4e9ec2584
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/high-performance-complementary-ws2devices-with-hybrid-grni-contacts(e6df39ca-d1a3-4678-ba7c-41b4e9ec2584).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85094983115&partnerID=8YFLogxK
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/61821
dc.description | openaire: EC/H2020/834742/EU//ATOP
dc.description.abstract Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for future solid-state device applications due to their unique properties. However, it is challenging to realize 2D material based high performance complementary devices due to the stubborn Fermi level pinning effect and the lack of facile doping techniques. In this paper, we reported a hybrid Gr/Ni contact to WS2, which can switch carrier types from n-type to p-type in WS2. The unorthodox polarity transition is attributed to the natural p-doping of graphene with Ni adsorption and the alleviation of Fermi level pinning in WS2. Furthermore, we realized asymmetric Ni and Gr/Ni hybrid contacts to a multilayer WS2 device, and we observed synergistic p-n diode characteristics with excellent current rectification exceeding 104, and a near unity ideality factor of 1.1 (1.6) at a temperature of 4.5 K (300 K). Lastly, our WS2 p-n device exhibits high performance photovoltaic ability with a maximum photoresponsivity of 4 × 104 A W-1 at 532 nm wavelength, that is 108 times higher than that of graphene and 50 times better than that of the monolayer MoS2 photodetector. This doping-free carrier type modulation technique will pave the way to realize high performance complementary electronics and optoelectronic devices based on 2D materials. en
dc.format.extent 11
dc.format.extent 21280-21290
dc.language.iso en en
dc.publisher ROYAL SOC CHEMISTRY
dc.relation info:eu-repo/grantAgreement/EC/H2020/834742/EU//ATOP
dc.relation.ispartofseries Nanoscale en
dc.relation.ispartofseries Volume 12, issue 41 en
dc.rights restrictedAccess en
dc.title High performance complementary WS2devices with hybrid Gr/Ni contacts en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Sejong University
dc.contributor.department Department of Electronics and Nanoengineering
dc.contributor.department Chung-Ang University
dc.contributor.department Yonsei University
dc.contributor.department Dongguan University of Technology
dc.contributor.department Centre of Excellence in Quantum Technology, QTF
dc.contributor.department Department of Applied Physics en
dc.identifier.urn URN:NBN:fi:aalto-2020113020666
dc.identifier.doi 10.1039/d0nr05737a


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