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Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited HfO2/ZnO and TiO2/ZnO Sandwiched Multilayer Thin Films

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Clairvaux Felizco, Jenichi
dc.contributor.author Juntunen, Taneli
dc.contributor.author Uenuma, Mutsunori
dc.contributor.author Etula, Jarkko
dc.contributor.author Tossi, Camilla
dc.contributor.author Ishikawa, Yasuaki
dc.contributor.author Tittonen, Ilkka
dc.contributor.author Uraoka, Yukiharu
dc.date.accessioned 2020-11-30T08:14:53Z
dc.date.available 2020-11-30T08:14:53Z
dc.date.issued 2020-10-28
dc.identifier.citation Clairvaux Felizco , J , Juntunen , T , Uenuma , M , Etula , J , Tossi , C , Ishikawa , Y , Tittonen , I & Uraoka , Y 2020 , ' Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited HfO2/ZnO and TiO2/ZnO Sandwiched Multilayer Thin Films ' , ACS Applied Materials and Interfaces , vol. 12 , no. 43 , pp. 49210-49218 . https://doi.org/10.1021/acsami.0c11439 en
dc.identifier.issn 1944-8244
dc.identifier.issn 1944-8252
dc.identifier.other PURE UUID: 61ecb8c4-5bd5-4fac-8a5d-8565d2dfc367
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/61ecb8c4-5bd5-4fac-8a5d-8565d2dfc367
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85094932931&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/51694966/Felizco_Enhanced_thermoelectric_transport_ACS.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/61714
dc.description.abstract Herein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and thermal stability, are exhibited by sandwiching HfO2 and TiO2 layers onto atomic layer deposited-ZnO thin films. High-temperature TE measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO2/ZnO (TZO) samples, primarily owing to an increase in carrier concentration by Ti doping. On the other hand, HfO2/ZnO (HZO) achieved the highest PF values owing to maintaining Seebeck coefficients comparable to pure ZnO. HZO also exhibited excellent stability after multiple thermal cycles, which has not been previously observed for pure or doped ZnO thin films. Such improvement in both TE properties and thermal stability of HZO can be attributed to a shift in crystalline orientation from the a axis to c axis, as well as the high bond dissociation energy of Hf-O, stabilizing the ZnO structure. These unique properties exhibited by HZO and TZO thin films synthesized by atomic layer deposition pave the way for next-generation transparent TE devices. en
dc.format.extent 9
dc.format.extent 49210-49218
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries ACS Applied Materials and Interfaces en
dc.relation.ispartofseries Volume 12, issue 43 en
dc.rights openAccess en
dc.title Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited HfO2/ZnO and TiO2/ZnO Sandwiched Multilayer Thin Films en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Nara Institute of Science and Technology
dc.contributor.department Ilkka Tittonen Group
dc.contributor.department Physical Characteristics of Surfaces and Interfaces
dc.contributor.department Department of Electronics and Nanoengineering
dc.contributor.department Department of Chemistry and Materials Science en
dc.identifier.urn URN:NBN:fi:aalto-2020113020559
dc.identifier.doi 10.1021/acsami.0c11439
dc.date.embargo info:eu-repo/date/embargoEnd/2021-09-25

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