Nitrogen-doped single-walled carbon nanotube thin films

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Nasibulin, Albert G., Dr.
dc.contributor.author Susi, Toma
dc.date.accessioned 2012-08-30T06:25:09Z
dc.date.available 2012-08-30T06:25:09Z
dc.date.issued 2011
dc.identifier.isbn 978-952-60-4124-7 (PDF)
dc.identifier.isbn 978-952-60-4123-0 (printed)
dc.identifier.issn 1799-4942
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/4959
dc.description.abstract Carbon nanotubes are one of the most exciting materials for emerging practical nanotechnologies. However, a significant issue for applications is the mixture of semiconducting and metallic tubes in all typical samples. One of the proposed solutions for this problem is to tailor the electronic structure by doping the lattice with heteroatoms, most notably nitrogen. In this thesis, nitrogen-doped single-walled carbon nanotubes (N-SWCNTs) were synthesized using an ambient pressure floating catalyst chemical vapor deposition method. A novel combination of precursors was used, with carbon monoxide (CO) acting as the carbon source and ammonia (NH3) as the nitrogen source. Experiments were conducted with two reactor setups, both utilizing iron nanoparticles as the catalysts. The material was deposited as grown directly from the gas phase as films on various substrates and subsequently characterized by a variety of microscopic and spectroscopic methods, as well as sheet resistance measurements. The sheet resistance measurements of the thin film samples revealed that the doped films had unexpectedly high resistances. To understand this effect, a resistor network model was developed, which allowed the disentanglement of the contribution of bundle-bundle contacts when combined with data for undoped films. Assuming doping does not significantly change the contacts, the increased resistances of the doped films are likely due to enhanced carrier scattering by defect sites in the nanotubes. This work represents the first experimental report on macroscopic N-SWCNT thin films. Finally, the mechanism of the initial stages of N-SWCNT growth was studied for the first time by tandem infrared and mass spectrometry gas measurements and first principles electronic-structure calculations. We investigated the bonding and chemistry of CO, NH3, and their fragments on a model Fe55 icosahedral cluster. A possible dissociation path for NH3 to atomic nitrogen and hydrogen was identified, with a reaction barrier consistent with an experimentally determined value. Both C-C and C-N bond formation reactions were found to be barrierless and exothermic, while a parasitic reaction of hydrogen cyanide formation had a large barrier of over 1 eV. en
dc.format.extent Verkkokirja (27533 KB, 89 s.)
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Aalto University en
dc.relation.ispartofseries Aalto University publication series DOCTORAL DISSERTATIONS , 41/2011 en
dc.relation.haspart [Publication 1]: Susi, T., Nasibulin, A.G., Ayala, P., Tian, Y., Zhu, Z., Jiang, H., Roquelet, C., Garrot, D., Lauret, J-S., Kauppinen, E.I., 2009. High quality SWCNT synthesis in the presence of NH3 using a vertical flow aerosol reactor, Physica Status Solidi B 246, 2507-2510, doi: 10.1002/pssb.200982338. en
dc.relation.haspart [Publication 2]: Zhu, Z., Jiang, H., Susi, T., Nasibulin, A.G., and Kauppinen, E.I., 2010. The Use of NH3 to Promote the Production of Large-Diameter Single-Walled Carbon Nanotubes with a Narrow (n,m) Distribution, Journal of the American Chemical Society 133, 1224-1227, doi: 10.1021/ja1087634. en
dc.relation.haspart [Publication 3]: Susi, T., Zhu, Z., Ruiz-Soria, G., Arenal, R., Ayala, P., Nasibulin, A.G., Lin, H., Jiang, H., Stephan, O., Pichler, T., Loiseau, A., and Kauppinen, E.I., 2010. Nitrogen-doped SWCNT synthesis using ammonia and carbon monoxide, Physica Status Solidi B 247, 2726-2729, doi: 10.1002/pssb.201000312. en
dc.relation.haspart [Publication 4]: Susi, T., Kaskela, A., Zhu, Z., Ayala, P., Arenal, R., Tian, Y., Laiho, P., Mali, J., Nasibulin, A.G., Jiang, H., Lanzani, G., Stephan, O., Laasonen, K., Pichler, T., Loiseau, A., Kauppinen, E.I., 2011. Nitrogen-doped Single-Walled Carbon Nanotube Thin Films Exhibiting Anomalous Sheet Resistances, Chemistry of Materials 23, 2201-2208, doi: 10.1021/cm200111b. en
dc.relation.haspart [Publication 5]: Mudimela, P.R., Nasibulin, A.G., Jiang, H., Susi, T., Chassaing, D., and Kauppinen, E.I., 2009. Incremental Variation in the Number of Carbon Nanotube Walls with Growth Temperature. The Journal of Physical Chemistry C, 113, 2212-2218, doi: 10.1021/jp808316p. en
dc.relation.haspart [Publication 6]: Lanzani, G., Susi, T., Ayala, P., Jiang, T., Nasibulin, A.G., Bligaard, T., Laasonen, K., and Kauppinen, E.I., 2010. Mechanism study of floating catalyst CVD synthesis of SWCNTs, Physica Status Solidi B 247, 2708-2712, doi: 10.1002/pssb.201000226. en
dc.relation.haspart [Publication 7]: Susi, T., Lanzani, G., Nasibulin, A.G., Ayala, P., Jiang, T., Bligaard, T., Laasonen, K., and Kauppinen, E.I., 2011. Mechanism of the initial stages of nitrogen-doped single-walled carbon nanotube growth, Physical Chemistry Chemical Physics (in press), doi: 10.1039/c1cp20454h. en
dc.subject.other Physics
dc.subject.other Chemistry
dc.title Nitrogen-doped single-walled carbon nanotube thin films en
dc.type G5 Artikkeliväitöskirja fi
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword nitrogen doping en
dc.subject.keyword SWCNT en
dc.subject.keyword chirality control en
dc.subject.keyword electrode en
dc.subject.keyword growth mechanism en
dc.identifier.urn URN:ISBN:978-952-60-4124-7
dc.type.dcmitype text en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.type.ontasot Doctoral dissertation (article-based) en
dc.contributor.supervisor Kauppinen, Esko I., Prolf


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