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High-k ternary rare earth oxides by atomic layer deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Niinistö, Lauri, Prof. emer.
dc.contributor.advisor Putkonen, Matti, Prof.
dc.contributor.author Myllymäki, Pia
dc.date.accessioned 2012-08-29T09:50:36Z
dc.date.available 2012-08-29T09:50:36Z
dc.date.issued 2010
dc.identifier.isbn 978-952-60-3489-8 (PDF)
dc.identifier.isbn 978-952-60-3488-1 (printed) #8195;
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/4900
dc.description.abstract The present thesis describes atomic layer deposition (ALD) of ternary rare earth (RE) oxides and characterization of compositional, structural and electrical properties of the films. The REScO3, LaLuO3 and ErxGa2-xO3 thin films investigated are potential high-κ materials for future metal-oxide-semiconductor field-effect transistors, i.e. MOSFETs. The dissertation consists of five peer reviewed publications. As a background for the work, issues related to the miniaturization of MOSFETs and the feasibility of rare earth oxides as new high-κ dielectrics are discussed. Also some challenges of manufacturing Ga-based MOSFETs with high quality gate oxide having satisfactory interface properties and the role of rare earth oxides in GaAs passivation are presented. In addition the basic principle of the ALD method is briefly introduced and recent literature concerning deposition of rare earth oxides is reviewed. A series of REScO3 thin films was deposited by ALD using rare earth β-diketonate precursors RE(thd)3 together with ozone. The films were characterized for growth rate, elemental composition, crystallization upon annealing and electrical properties. Amorphous films of high quality with low impurity contents and promising electrical characteristics were produced. Several gradually evolving properties of the films were examined and the effect of the RE3+ cation size was discussed. YScO3 films were also deposited using novel cyclopentadienyl metal precursors and water. Deposition of LaLuO3 films having similar properties but even higher dielectric constant (κ ≈ 30) than ternary scandates was examined at two different temperatures. The relationship between the crystallization behaviour and the dielectric constant of REScO3 and LaLuO3 thin films was discussed. Finally deposition of a possible gate oxide for GaAs MOSFETs, viz. ErxGa2-xO3 by two different precursor approaches was investigated. In addition to β-diketonate metal precursors novel cyclopentadienyl and amidinate metal precursors together with water as oxygen source were utilized. For both YScO3 and ErxGa2-xO3 films the choice of precursor system affected e.g. the electrical properties and the crystallization behavior. en
dc.format.extent Verkkokirja (1496 KB, 50 s.)
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Aalto-yliopiston teknillinen korkeakoulu en
dc.relation.ispartofseries Inorganic chemistry publication series, 11 en
dc.relation.haspart [Publication 1]: Pia Myllymäki, Minna Nieminen, Jaakko Niinistö, Matti Putkonen, Kaupo Kukli, and Lauri Niinistö. 2006. High-permittivity YScO3 thin films by atomic layer deposition using two precursor approaches. Journal of Materials Chemistry, volume 16, number 6, pages 563-569. © 2006 Royal Society of Chemistry (RSC). By permission. en
dc.relation.haspart [Publication 2]: P. Myllymäki, M. Roeckerath, M. Putkonen, S. Lenk, J. Schubert, L. Niinistö, and S. Mantl. 2007. Characterization and electrical properties of high-κ GdScO3 thin films grown by atomic layer deposition. Applied Physics A: Materials Science & Processing, volume 88, number 4, pages 633-637. en
dc.relation.haspart [Publication 3]: Pia Myllymäki, Martin Roeckerath, Joao Marcelo Lopes, Jürgen Schubert, Kenichiro Mizohata, Matti Putkonen, and Lauri Niinistö. 2010. Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size. Journal of Materials Chemistry, volume 20, number 20, pages 4207-4212. © 2010 Royal Society of Chemistry (RSC). By permission. en
dc.relation.haspart [Publication 4]: M. Roeckerath, T. Heeg, J. M. J. Lopes, J. Schubert, S. Mantl, A. Besmehn, P. Myllymäki, and L. Niinistö. 2008. Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric. Thin Solid Films, volume 517, number 1, pages 201-203. © 2008 Elsevier Science. By permission. en
dc.relation.haspart [Publication 5]: Charles L. Dezelah IV, Pia Myllymäki, Jani Päiväsaari, Kai Arstila, Lauri Niinistö, and Charles H. Winter. 2007. The growth of ErxGa2−xO3 films by atomic layer deposition from two different precursor systems. Journal of Materials Chemistry, volume 17, number 13, pages 1308-1315. © 2007 Royal Society of Chemistry (RSC). By permission. en
dc.subject.other Chemistry
dc.subject.other Physics
dc.title High-k ternary rare earth oxides by atomic layer deposition en
dc.type G5 Artikkeliväitöskirja fi
dc.contributor.school Aalto-yliopiston teknillinen korkeakoulu fi
dc.contributor.department Kemian laitos fi
dc.contributor.department Department of Chemistry en
dc.subject.keyword thin film en
dc.subject.keyword ternary rare earth oxide en
dc.subject.keyword high-k dielectric en
dc.identifier.urn URN:ISBN:978-952-60-3489-8
dc.type.dcmitype text en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.type.ontasot Doctoral dissertation (article-based) en
dc.contributor.supervisor Karppinen, Maarit, Acad. Prof.
local.aalto.digifolder Aalto_67089
local.aalto.digiauth ask

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