Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2020-10-05
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Language
en
Pages
5
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Applied Physics Letters, Volume 117, issue 14
Abstract
We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 × 10 16 cm-3 to 2 × 10 18 cm-3 in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 × 10 17 cm-3 to 7 × 10 18 cm-3. On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 × 10 18 cm-3 in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.
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Prozheev, I, Mehnke, F, Wernicke, T, Kneissl, M & Tuomisto, F 2020, ' Electrical compensation and cation vacancies in Al rich Si-doped AlGaN ', Applied Physics Letters, vol. 117, no. 14, 142103 . https://doi.org/10.1063/5.0016494