Fabrication and characterization of ferro- and piezoelectric multilayer devices for high frequency applications

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Riekkinen, Tommi
dc.date.accessioned 2012-08-23T11:24:18Z
dc.date.available 2012-08-23T11:24:18Z
dc.date.issued 2009
dc.identifier.isbn 978-951-38-7357-8 (electronic)
dc.identifier.isbn 978-951-38-7356-1 (printed) #8195;
dc.identifier.issn 1455-0849
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/4676
dc.description.abstract By means of thin film technology a reduction of size, cost, and power consumption of electronic circuits can be achieved. The required specifications are attained by proper design and combinations of innovative materials and manufacturing technologies. This thesis focuses on the development and fabrication of low-loss ceramic thin film devices for radio and microwave frequency applications. The materials, growth conditions, and physical properties of the films and device structures are discussed in detail. Moreover, special emphasis is placed on the integration of highly conductive low-loss electrode materials into parallel-plate structures. The thin films were prepared by sequential magnetron sputtering from metallic and ceramic deposition targets. The devices under study include tunable ferroelectric barium strontium titanate and lead strontium titanate parallel-plate capacitors, and piezoelectric aluminum nitride thin film bulk acoustic wave resonators. Furthermore, tantalum pentoxide and tantalum nitride thin films were investigated for capacitor and resistor applications. As electrode material we used Au, Cu, Mo, and Pt. The use of highly conductive low-loss Cu electrodes was only possible after the development of a new layer transfer fabrication method for parallel-plate ceramic devices. This method, which was successfully used to fabricate tunable ferroelectric capacitors and AlN bulk acoustic wave resonators, allows for high-quality ceramic film growth on suitable substrate and seed layers and, most importantly, deposition of the bottom and top electrodes after high-temperature reactive sputtering of the ceramic material. Optimization of the ceramic growth conditions and the integration of these functional materials into low-loss parallel-plate structures resulted in state-of-the-art device performance. Key achievements include, device quality factors of more than 100 up to GHz frequency in ferroelectric parallel-plate capacitors, the tailoring of ferroelectric film properties using substrate bias during magnetron sputtering, and very efficient electro-acoustic coupling in Mo/AlN/Mo bulk acoustic wave resonators. en
dc.format.extent Verkkokirja (4383 KB, 90 s.)
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Teknillinen korkeakoulu en
dc.relation.ispartofseries VTT publications,, 716 en
dc.relation.haspart [Publication 1]: Tommi Riekkinen, Tomi Mattila, Sebastiaan van Dijken, A. Lüker, Qi Zhang, Paul B. Kirby, and Ana M. Sánchez. 2007. Ferroelectric parallel-plate capacitors with copper electrodes for high-frequency applications. Applied Physics Letters, volume 91, number 25, 252902, 3 pages. en
dc.relation.haspart [Publication 2]: T. Riekkinen, J. Molarius, and M. Ylilammi. 2007. Electrode metallization for high permittivity oxide RF thin film capacitors. Journal of the European Ceramic Society, volume 27, numbers 8-9, pages 2983-2987. en
dc.relation.haspart [Publication 3]: T. Riekkinen and J. Molarius. 2003. Reactively sputtered tantalum pentoxide thin films for integrated capacitors. Microelectronic Engineering, volume 70, numbers 2-4, pages 392-397. en
dc.relation.haspart [Publication 4]: T. Riekkinen, J. Molarius, T. Laurila, A. Nurmela, I. Suni, and J. K. Kivilahti. 2002. Reactive sputter deposition and properties of TaxN thin films. Microelectronic Engineering, volume 64, numbers 1-4, pages 289-297. en
dc.relation.haspart [Publication 5]: T. Riekkinen, A. Nurmela, J. Molarius, T. Pensala, P. Kostamo, M. Ylilammi, and S. van Dijken. 2009. Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators. Thin Solid Films, volume 517, number 24, pages 6588-6592. en
dc.relation.haspart [Publication 6]: Tommi Riekkinen, Jan Saijets, Pasi Kostamo, Timo Sajavaara, and Sebastiaan van Dijken. 2009. Influence of substrate bias on the structural and dielectric properties of magnetron-sputtered BaxSr1−xTiO3 thin films. arXiv:0909.1637v1 [cond-mat.mtrl-sci]. en
dc.subject.other Physics en
dc.title Fabrication and characterization of ferro- and piezoelectric multilayer devices for high frequency applications en
dc.type G5 Artikkeliväitöskirja fi
dc.contributor.school Informaatio- ja luonnontieteiden tiedekunta fi
dc.subject.keyword ferroelectric en
dc.subject.keyword piezoelectric en
dc.subject.keyword parallele-plate capacitator en
dc.subject.keyword dielectric tuning en
dc.subject.keyword dielectric loss en
dc.subject.keyword RF applications en
dc.identifier.urn URN:ISBN:978-951-38-7357-8
dc.type.dcmitype text en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.type.ontasot Doctoral dissertation (article-based) en

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