Processing of radiation hard particle detectors on Czochralski silicon

 |  Login

Show simple item record

dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tuovinen, Esa
dc.date.accessioned 2012-08-21T06:25:32Z
dc.date.available 2012-08-21T06:25:32Z
dc.date.issued 2008
dc.identifier.isbn 978-952-10-3727-6
dc.identifier.isbn 978-952-10-3726-9 (printed) #8195;
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/4536
dc.description.abstract The purpose of this work was to study the radiation hardness of particle detectors. Silicon detectors are cost-effective and have an excellent spatial resolution. Therefore, they are widely used in many high-energy physics experiments. It is known that oxygen improves the radiation hardness of silicon detectors. The natural way to have a high concentration of oxygen in silicon is to use magnetic Czochralski silicon (MCz-Si). MCz-Si has intrinsically a relatively uniform and high level of oxygen (5×1017 cm³) compared to regular float-zone silicon (FZ-Si). Such a level is hard to attain with other methods, namely the diffusion oxygenation of float-zone silicon. In the Large Hadron Collider (LHC) and its potential upgrade, the luminosity and the fluencies of fast hadrons can be so high that detectors made of standard detector-grade FZ-Si might not survive the planned operating period. MCz-Si offers an improvement to the lifetime of particle detectors through improved radiation hardness. This thesis takes a process-oriented view of the potential of the MCz-Si material. The processing of radiation detectors on MCz-Si is described, the process is characterized from the process point of view, and the radiation hardness is studied after irradiations. There is also an emphasis on the intentional introduction of thermal donors (TDs) in high-resistivity MCz-Si material, and specifically on their potential in p-type MCz-Si detectors. en
dc.format.extent Verkkokirja (951 KB, 45,[8] s.)
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Teknillinen korkeakoulu en
dc.relation.haspart [Publication 1]: E. Tuovinen, J. Härkönen, P. Luukka, and E. Tuominen, Intentional thermal donor activation in magnetic Czochralski silicon, Materials Science in Semiconductor Processing 10 (2007) 179-184. © 2007 Elsevier Science. By permission. en
dc.relation.haspart [Publication 2]: E. Tuovinen, J. Härkönen, P. Luukka, E. Tuominen, E. Verbitskaya, V. Eremin, I. Ilyashenko, A. Pirojenko, I. Riihimäki, A. Virtanen, and K. Leinonen, Czochralski silicon detectors irradiated with 24 GeV/c and 10 MeV protons, Nuclear Instruments and Methods in Physics Research A 568 (2006) 83-88. © 2006 Elsevier Science. By permission. en
dc.relation.haspart [Publication 3]: J. Härkönen, E. Tuovinen, Z. Li, P. Luukka, E. Verbitskaya, and V. Eremin, Recombination lifetime characterization and mapping of silicon wafers and detectors using the microwave photoconductivity decay (μPCD) technique, Materials Science in Semiconductor Processing 9 (2006) 261-265. © 2006 Elsevier Science. By permission. en
dc.relation.haspart [Publication 4]: J. Härkönen, E. Tuovinen, P. Luukka, H.K. Nordlund, and E. Tuominen, Magnetic Czochralski silicon as detector material, Nuclear Instruments and Methods in Physics Research A 579 (2007) 648-652. © 2007 Elsevier Science. By permission. en
dc.relation.haspart [Publication 5]: J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen, and Z. Li, p+/n−/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor induced space charge sign inversion, IEEE Transactions on Nuclear Science 52 (2005) 1865-1868. © 2005 IEEE. By permission. en
dc.relation.haspart [Publication 6]: J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen, Z. Li, A. Ivanov, E. Verbitskaya, V. Eremin, A. Pirojenko, I. Riihimäki, and A. Virtanen, Particle detectors made of high-resistivity Czochralski silicon, Nuclear Instruments and Methods in Physics Research A 541 (2005) 202-207. © 2005 Elsevier Science. By permission. en
dc.subject.other Electrical engineering en
dc.subject.other Physics en
dc.title Processing of radiation hard particle detectors on Czochralski silicon en
dc.type G5 Artikkeliväitöskirja fi
dc.contributor.department Fysiikan tutkimuslaitos fi
dc.subject.keyword silicon en
dc.subject.keyword radiation hardness en
dc.subject.keyword particle detector en
dc.subject.keyword magnetic Czochralski silicon en
dc.subject.keyword thermal donor en
dc.identifier.urn URN:ISBN:978-952-10-3727-6
dc.type.dcmitype text en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.type.ontasot Doctoral dissertation (article-based) en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search archive


Advanced Search

article-iconSubmit a publication

Browse

My Account