Learning Centre

Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx

 |  Login

Files in this item

Files Size Format View

There are no open access files associated with this item.

This item appears in the following Collection(s)

Search archive

Advanced Search

article-iconSubmit a publication