Origin of nanoscale incipient plasticity in GaAs and InP crystal

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Chrobak, Dariusz
dc.contributor.author Trębala, Michał
dc.contributor.author Chrobak, Artur
dc.contributor.author Nowak, Roman
dc.date.accessioned 2020-01-17T13:34:10Z
dc.date.available 2020-01-17T13:34:10Z
dc.date.issued 2019-12-01
dc.identifier.citation Chrobak , D , Trębala , M , Chrobak , A & Nowak , R 2019 , ' Origin of nanoscale incipient plasticity in GaAs and InP crystal ' , Crystals , vol. 9 , no. 12 , 651 . https://doi.org/10.3390/cryst9120651 en
dc.identifier.issn 2073-4352
dc.identifier.other PURE UUID: f959cdc9-3b6a-4431-90a1-ef0a13cbd03c
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/origin-of-nanoscale-incipient-plasticity-in-gaas-and-inp-crystal(f959cdc9-3b6a-4431-90a1-ef0a13cbd03c).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85076617422&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/39995450/CHEM_Chrobak_et_al_Origin_of_Nanoscale_2020_crystals.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/42605
dc.description.abstract In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn-and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration. en
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher MDPI AG
dc.relation.ispartofseries Crystals en
dc.relation.ispartofseries Volume 9, issue 12 en
dc.rights openAccess en
dc.subject.other Chemical Engineering(all) en
dc.subject.other Materials Science(all) en
dc.subject.other Condensed Matter Physics en
dc.subject.other Inorganic Chemistry en
dc.subject.other 215 Chemical engineering en
dc.title Origin of nanoscale incipient plasticity in GaAs and InP crystal en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department University of Silesia in Katowice
dc.contributor.department Department of Chemistry and Materials Science
dc.contributor.department Department of Chemistry and Materials Science en
dc.subject.keyword Dislocation
dc.subject.keyword Incipient plasticity
dc.subject.keyword Nanoindentation
dc.subject.keyword Phase transformation
dc.subject.keyword Semiconductors
dc.subject.keyword Chemical Engineering(all)
dc.subject.keyword Materials Science(all)
dc.subject.keyword Condensed Matter Physics
dc.subject.keyword Inorganic Chemistry
dc.subject.keyword 215 Chemical engineering
dc.identifier.urn URN:NBN:fi:aalto-202001171720
dc.identifier.doi 10.3390/cryst9120651
dc.type.version publishedVersion


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