Title: | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Silicon Dioxide and Aluminum Oxide |
Author(s): | Zhu, Zhen |
Date: | 2019 |
Language: | en |
Pages: | 62 + app. 41 |
Department: | Elektroniikan ja nanotekniikan laitos Department of Electronics and Nanoengineering |
ISBN: | 978-952-60-8883-9 (electronic) 978-952-60-8882-2 (printed) |
Series: | Aalto University publication series DOCTORAL DISSERTATIONS, 235/2019 |
ISSN: | 1799-4942 (electronic) 1799-4934 (printed) 1799-4934 (ISSN-L) |
Supervising professor(s): | Savin, Hele, Prof., Aalto University, Department of Electronics and Nanoengineering, Finland |
Thesis advisor(s): | Savin, Hele, Prof., Aalto University, Department of Electronics and Nanoengineering, Finland |
Subject: | Electrical engineering |
Keywords: | atomic layer deposition, plasma-enhanced atomic layer deposition, low temperature, Al2O3, SiO2 |
Archive | yes |
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Abstract:Atomic layer deposition (ALD) is a powerful deposition technique for the fabrication of highly conformal and precise thickness-controlled films. Recently, there has been a growing interest in low-temperature (< 100˚C) ALD because of the emerging applications made of organic and polymeric materials, which are known to be thermally sensitive materials. Due to the inherent disadvantages of low-temperature thermal ALD, such as slow reaction rate, long cycle time, poor film density, high impurity level and poor encapsulation properties of ultra-thin films (<5nm), the plasma-enhanced atomic layer deposition (PEALD) becomes an attractive alternative. However, there is only limited data available to show the effect of plasma parameters on film properties at low process temperatures and thus its full potential remains largely unexplored. This thesis presents the process development for low-temperature PEALD SiO2 and Al2O3 aiming to have a deeper understanding of plasma parameters vs. film properties.
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Parts:[Publication 1]: Z. Zhu, C. Modanese, P. Sippola, M. Di Sabatino, H. Savin. Nanometerscale depth-resolved atomic layer deposited SiO2 thin films analyzed by glow discharge optical emission spectroscopy. Physica Status Solidi A, 215, 6, 1700864, 2018. Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201808214586. DOI: 10.1002/pssa.201700864 View at Publisher [Publication 2]: Z. Zhu, P. Sippola, O.M.E. Ylivaara, C. Modanese, M. Di Sabatino, K. Mizohata, S. Merdes, H. Lipsanen, H. Savin. Low-temperature plasma-enhanced atomic layer deposition of SiO2 using carbon dioxide. Nanoscale Research Letters, 14, 55, 2019. Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201903052168. DOI: 10.1186/s11671-019-2889-y View at Publisher [Publication 3]: Z. Zhu, P. Sippola, H. Lipsanen, H. Savin, S. Merdes. Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100 °C for moisture barrier applications. Japanese Journal of Applied Physics, 57, 12, 125502, 2018. Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201812216710. DOI: 10.7567/JJAP.57.125502 View at Publisher [Publication 4]: Z. Zhu, S. Merdes, O.M.E Ylivaara, K. Mizohata, M.J. Heikkilä, H. Savin. Al2O3 thin films prepared by a combined thermal-plasma atomic layer deposition process at low temperature for encapsulation applications. Physica Status Solidi A, 1900237, 2019. DOI: 10.1002/pssa.201900237 View at Publisher [Publication 5]: Z. Zhu, E. Salmi, S. Virtanen. Residual stress study of thin films deposited by atomic layer deposition. In IEEE conference proceeding. IEEE 12th International Conference on ASIC (ASICON), Guiyang, China, 233-236, 2017. DOI: 10.1109/ASICON.2017.8252455 View at Publisher |
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