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Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Mustonen, Kimmo
dc.contributor.author Markevich, Alexander
dc.contributor.author Tripathi, Mukesh
dc.contributor.author Inani, Heena
dc.contributor.author Ding, Er Xiong
dc.contributor.author Hussain, Aqeel
dc.contributor.author Mangler, Clemens
dc.contributor.author Kauppinen, Esko I.
dc.contributor.author Kotakoski, Jani
dc.contributor.author Susi, Toma
dc.date.accessioned 2019-07-30T07:22:04Z
dc.date.available 2019-07-30T07:22:04Z
dc.date.issued 2019-01-01
dc.identifier.citation Mustonen , K , Markevich , A , Tripathi , M , Inani , H , Ding , E X , Hussain , A , Mangler , C , Kauppinen , E I , Kotakoski , J & Susi , T 2019 , ' Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes ' , Advanced Functional Materials , pp. 1-7 . https://doi.org/10.1002/adfm.201901327 en
dc.identifier.issn 1616-301X
dc.identifier.issn 1616-3028
dc.identifier.other PURE UUID: ff4f9d55-f3b6-4e1c-aa9a-b51ef3144a74
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/ff4f9d55-f3b6-4e1c-aa9a-b51ef3144a74
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85067432961&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/35124740/s41467_019_09799_2.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/39535
dc.description | openaire: EC/H2020/756277/EU//ATMEN
dc.description.abstract The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances not only in electron optics and microscope stability but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55–60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps are recorded and the relevant displacement cross sections are estimated. Molecular dynamics simulations show that even in 2 nm diameter SWCNTs, the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in 2D materials may enable the fabrication of tunable electronic resonators and other devices. en
dc.format.extent 1-7
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher WILEY-V C H VERLAG GMBH
dc.relation info:eu-repo/grantAgreement/EC/H2020/756277/EU//ATMEN
dc.relation.ispartofseries Advanced Functional Materials en
dc.rights openAccess en
dc.title Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department University of Vienna
dc.contributor.department NanoMaterials
dc.contributor.department Department of Applied Physics
dc.subject.keyword atom manipulation
dc.subject.keyword heteroatoms
dc.subject.keyword nanotechnology
dc.subject.keyword STEM
dc.identifier.urn URN:NBN:fi:aalto-201907304590
dc.identifier.doi 10.1002/adfm.201901327
dc.type.version publishedVersion


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