Electroluminescent Cooling in III-V Intracavity Diodes

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sadi, Toufik
dc.contributor.author Radevici, Ivan
dc.contributor.author Kivisaari, Pyry
dc.contributor.author Oksanen, Jani
dc.date.accessioned 2019-06-20T13:15:51Z
dc.date.available 2019-06-20T13:15:51Z
dc.date.issued 2019-06-01
dc.identifier.citation Sadi , T , Radevici , I , Kivisaari , P & Oksanen , J 2019 , ' Electroluminescent Cooling in III-V Intracavity Diodes : Efficiency Bottlenecks ' IEEE Transactions on Electron Devices , vol. 66 , no. 6 , 8693895 , pp. 2651-2656 . https://doi.org/10.1109/TED.2019.2910219 en
dc.identifier.issn 0018-9383
dc.identifier.other PURE UUID: a51c8085-cead-4ae0-957a-bb8d2a272112
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/electroluminescent-cooling-in-iiiv-intracavity-diodes(a51c8085-cead-4ae0-957a-bb8d2a272112).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85065882639&partnerID=8YFLogxK
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/38861
dc.description | openaire: EC/H2020/638173/EU//iTPX
dc.description.abstract Recent advances in the photoluminescent cooling of doped glasses provoke the question of whether similar progress is possible in electroluminescent cooling (ELC), and if so, what are the conditions for observing it at high powers. Here, we establish a simulation framework for III-V intracavity double-diode structures (DDSs) intended for studying ELC and introduce and analyze the most relevant figures of merit for the recently measured devices exhibiting the highest reported quantum efficiency of 70%. In essence, the DDSs optically couple a GaInP/GaAs double heterojunction light-emitting diode (LED) and a GaAs p-n homojunction photodetector (PD), integrated as a single device. The modeling framework couples the drift-diffusion charge transport model with a photon transport model and uses our recent experimental measurements for validation and the extraction of important material parameters. Results show that the model can accurately describe the experimental behavior over many orders of magnitude and suggest that the internal efficiency of the LED already exceeds the cooling threshold. Directly observing cooling in the presently studied devices, however, is still hindered by bottlenecks arising from the surface recombination at the LED walls and recombination losses in the PD. en
dc.format.extent 6
dc.format.extent 2651-2656
dc.language.iso en en
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation info:eu-repo/grantAgreement/EC/H2020/638173/EU//iTPX
dc.relation.ispartofseries IEEE Transactions on Electron Devices en
dc.relation.ispartofseries Volume 66, issue 6 en
dc.rights restrictedAccess en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.subject.other Electrical and Electronic Engineering en
dc.subject.other 213 Electronic, automation and communications engineering, electronics en
dc.title Electroluminescent Cooling in III-V Intracavity Diodes en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Neuroscience and Biomedical Engineering
dc.contributor.department Department of Neuroscience and Biomedical Engineering en
dc.subject.keyword double-diode structures
dc.subject.keyword electroluminescent cooling
dc.subject.keyword III-As
dc.subject.keyword light-emitting diodes (LEDs)
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.subject.keyword Electrical and Electronic Engineering
dc.subject.keyword 213 Electronic, automation and communications engineering, electronics
dc.identifier.urn URN:NBN:fi:aalto-201906203927
dc.identifier.doi 10.1109/TED.2019.2910219


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