Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Radevici, Ivan
dc.contributor.author Tiira, Jonna
dc.contributor.author Sadi, Toufik
dc.contributor.author Oksanen, Jani
dc.date.accessioned 2019-05-08T09:01:05Z
dc.date.available 2019-05-08T09:01:05Z
dc.date.issued 2018
dc.identifier.citation Radevici, Ivan & Tiira, Jonna & Sadi, Toufik & Oksanen, Jani. 2018. Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling. ISSN 0268-1242 (printed). DOI: 10.1088/1361-6641/aab6c3. en
dc.identifier.issn 0268-1242 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/37833
dc.description.abstract Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables studying EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency (CQE). en
dc.format.extent
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.rights © 2018 IOP Publishing. en
dc.subject.other Electrical engineering en
dc.subject.other Energy en
dc.subject.other Materials science en
dc.subject.other Physics en
dc.title Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder IOP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Neurotieteen ja lääketieteellisen tekniikan laitos fi
dc.contributor.department Department of Neuroscience and Biomedical Engineering en
dc.subject.keyword electroluminescent cooling en
dc.subject.keyword quantum efficiency en
dc.subject.keyword radiative and non-radiative recombination en
dc.subject.keyword III-V semiconductors en
dc.subject.keyword double diode structures en
dc.subject.keyword current spreading en
dc.identifier.urn URN:NBN:fi:aalto-201803151709
dc.type.dcmitype text en
dc.identifier.doi 10.1088/1361-6641/aab6c3
dc.contributor.lab Engineered Nanosystems Group en
dc.contributor.lab Engineered Nanosystems Group fi
dc.type.version Post print en


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